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US Patent Issued to Teledyne FLIR Commercial Systems on April 14 for "Multi-etch detector pixels fabrication and associated imaging systems and methods" (California Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,542, issued on April 14, was assigned to Teledyne FLIR Commercial Systems Inc. (Goleta, Calif.). "Multi-etch detector pixels fabrication a... Read More


US Patent Issued to Teledyne FLIR Commercial Systems on April 14 for "Multi-etch detector pixels fabrication and associated imaging systems and methods" (California Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,542, issued on April 14, was assigned to Teledyne FLIR Commercial Systems Inc. (Goleta, Calif.). "Multi-etch detector pixels fabrication a... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Manufacturing method of image sensor package" (South Korean Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,543, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Manufacturing method of image sensor packa... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Manufacturing method of image sensor package" (South Korean Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,543, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Manufacturing method of image sensor packa... Read More


US Patent Issued to SONY SEMICONDUCTOR SOLUTIONS on April 14 for "Solid-state imaging element" (Japanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,544, issued on April 14, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan). "Solid-state imaging element" was invented ... Read More


US Patent Issued to SONY SEMICONDUCTOR SOLUTIONS on April 14 for "Solid-state imaging element" (Japanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,544, issued on April 14, was assigned to SONY SEMICONDUCTOR SOLUTIONS Corp. (Kanagawa, Japan). "Solid-state imaging element" was invented ... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Photo diode with dual backside deep trench isolation depth" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,545, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Photo diode with dual backside de... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Photo diode with dual backside deep trench isolation depth" (Taiwanese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,545, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Photo diode with dual backside de... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Depth sensor" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,546, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Depth sensor" was invented by Seung Hyun L... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Depth sensor" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,546, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Depth sensor" was invented by Seung Hyun L... Read More